S T U404D
S amHop Microelectronics C orp.
Oct, 03 2005
Dual E nhancement Mode Field E ffect Transistor ( N and P Chann...
S T U404D
S amHop Microelectronics C orp.
Oct, 03 2005
Dual E nhancement Mode Field E ffect
Transistor ( N and P Channel)
P R ODUC T S UMMAR Y (N-C hannel)
V DS S
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P R ODUC T S UMMAR Y (P -C hannel)
V DS S
-40V
ID
16A
R DS (ON) ( m W )
Max
ID
-12A
R DS (ON) ( m W )
Max
30 @ V G S = 10V 40 @ V G S = 4.5V D1 D1/D2
48 @ V G S = -10V 65 @ V G S = -4.5V D2
40V
S1
G1
G1 S2 G2 TO-252-4L S1 N-ch
G2 S2 P -ch
ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)
P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ Tc -P ulsed
a
S ymbol V DS V GS 25 C 70 C ID IDM IS Tc= 25 C Tc= 70 C PD T J , T S TG
N-C hannel P-C hannel 40 20 16 13.8 50 8 11 7.7 -55 to 175 -40 20 -12 -10 -50 -6
Unit V V A A A A W C
Drain-S ource Diode Forward C urrent Maximum P ower Dissipation Operating Junction and S torage Temperature R ange
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-C ase Thermal R esistance, Junction-to-Ambient
1
R JC R JA
13.6 120
C /W C /W
S T U404D
N-Channel ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted)
Parameter
5
S ymbol
BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS Rg
b
Condition
V GS = 0V, ID = 250uA V DS = 32V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID = 8A V GS =4.5V, ID= 6A V DS = 5V, V GS = 4.5V V DS = 10V, ID= 8A
Min Typ C Max Unit
40 1 V uA 100 nA 1 1.8 22 30 20 20 885 1050 105 65 0.32 16 12 28 7 17 8.6 2.2 4....