MRF9060LR1

Freescale Semiconductor Technical Data MRF9060 Rev. 8, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large−signal, common−source amplifier applications in 26 volt base station equipment. Typical Two−Tone Performance at 945 MHz, 26 Volts Output Power — 60 Watts PEP Power Gain — 17 dB Efficiency — 40% IMD — −31 dBc www.DataSheet4U.com MRF9060LR1 MRF9060LSR1 Integrated ESD Protection Designed for Maximum Gain and Insertion Phase Flatness Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts CW Output Power Excellent Thermal Stability Characterized with Series Equivalent Large−Signal Impedance Parameters In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel. Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal. 945 MHz, 60 W, 26 V LATERAL N−CHANNEL BROADBAND RF POWER MOSFETs CASE 360B−05, STYLE 1 NI−360 MRF9060LR1 CASE 360C−05, STYLE 1 NI−360S MRF9060LSR1 Table 1. Maximum Ratings Rating Drain−Source Voltage Gate−Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C MRF9060LR1 MRF9060LSR1 Tstg TJ Symbol VDSS VGS PD Value − 0.5, +65 − 0.5, + 15 159 0.91 219 1.25 − 65 to +150 200 Unit Vdc Vdc W W/°C W W/°C °C °C Storage Temperature Range Operating Junction Temperature Table 2. Thermal Characteristics Ch...