MRF9060MR1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF9060M/D The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large–signal, common–source amplifier applications in 26 volt base station equipment. Typical Performance at 945 MHz, 26 Volts Output Power — 60 Watts PEP Power Gain — 18.0 dB Efficiency — 40% (Two Tones) IMD — –31.5 dBc www.DataSheet4U.com Integrated ESD Protection Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts CW Output Power Excellent Thermal Stability Characterized with Series Equivalent Large–Signal Impedance Parameters TO–270 Dual Lead Available in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. TO–272 Dual Lead Available in Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. MRF9060MR1 MRF9060MBR1 945 MHz, 60 W, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs CASE 1265–07, STYLE 1 TO–270 DUAL LEAD PLASTIC MRF9060MR1 CASE 1337–01, STYLE 1 TO–272 DUAL LEAD PLASTIC MRF9060MBR1 MAXIMUM RATINGS Rating Drain–Source Voltage Gate–Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value 65 –0.5, +15 223 1.79 –65 to +150 175 Unit Vdc Vdc Watts W/°C °C °C THERMAL CHARACTERISTI...