AP03N70H

AP03N70H/J Pb Free Plating Product Advanced Power Electronics Corp. ▼ Repetitive Avalanche Rated ▼ Fast Switching Speed ▼ Simple Drive Requirement ▼ RoHS Compliant www.DataSheet4U.com N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 600V 3.6Ω 3.3A G S Description The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for AC/DC converters. The through-hole version (AP03N70J) is available for low-profile applications. G D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR EAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 600 ±30 3.3 2.1 13.2 45 0.36 2 Units V V A A A W W/ ℃ mJ A mJ ℃ ℃ Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 85 3.3 3.3 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 2.8 110 Units ℃/W ℃/W Data & specifications subject to change without notice 200705052-1/4 AP03N70H/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ∆BVDSS/∆Tj RDS(ON) VGS(th) gfs www.DataSheet4U.com Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resis...