MA5J002E

Switching Diodes MA5J002E Silicon epitaxial planar type For high speed switching circuits ■ Features Includes 4 elements of cathode common connection Parts reduction is possible Ideal for surge voltage absorption 5˚ 1 2 2.0±0.1 (0.65) (0.65) 5 4 1.25±0.1 2.1±0.1 Unit: mm 0.7±0.1 3 0.2±0.05 5˚ 0.16+0.1 –0.06 ■ Absolute Maximum Ratings Ta = 25°C www.DataSheet4U.com Parameter Reverse voltage Maximum peak reverse voltage Forward current *1 *1 Symbol VR VRM IF IFM IFSM Tj Topr Tstg Rating 80 80 100 225 500 150 −25 to +105 −55 to +150 Unit (0.15) V V mA mA mA °C °C °C 1: Anode 1 2: Cathode 1, 2, 3, 4 0 to 0.1 Peak forward current Non-repetitive peak forward surge current *1, 2 Junction temperature Operating ambient temperature Storage temperature Note) *1: Value in single diode used. *2: t = 1 s 3: Anode 2 4: Anode 3 5: Anode 4 SMini5-F 1 Package Marking Symbol: M5B Internal Connection 5 4 1 2 3 ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Forward voltage Reverse voltage Reverse current Terminal capacitance Reverse recovery time * Symbol VF VR IR Ct trr IR = 100 µA VR = 75 V Conditions IF = 100 mA Min Typ Max 1.2 (0.425) Unit V V 80 100 2 3 nA pF ns VR = 0 V, f = 1 MHz IF = 10 mA, VR = 6 V Irr = 0.1 IR , RL = 100 Ω Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring method for diodes. 2. Absolute frequency of input and output is 100 MHz. 3. *: trr measurement circuit Bias Application Unit N-50BU tr...