SEMIX201GD066HDS

SEMiX201GD066HDs SEMiX® 13 Trench IGBT Modules SEMiX201GD066HDs Features Homogeneous Si Trench = Trenchgate technology VCE(sat) with positive temperature coefficient UL recognised file no. E63532 Typical Applications* Matrix Converter Resonant Inverter Current Source Inverter Remarks Case temperature limited to TC=125°C max. Product reliability results are valid for Tj=150°C For short circuit: Soft RGoff recommended Take care of over-voltage caused by stray inductance Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 175 °C Tc = 25 °C Tc = 80 °C ICnom ICRM VGES tpsc Tj ICRM = 2xICnom VCC = 360 V VGE ≤ 15 V VCES ≤ 600 V Tj = 150 °C Inverse diode IF Tj = 175 °C Tc = 25 °C Tc = 80 °C IFnom IFRM IFSM Tj IFRM = 2xIFnom tp = 10 ms, sin 180°, Tj = 25 °C Module It(RMS) Tstg Visol AC sinus 50Hz, t = 1 min Characteristics Symbol Conditions IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf IC = 200 A VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C VGE = 15 V Tj = 25 °C Tj = 150 °C VGE=VCE, IC = 3.2 mA VGE = 0 V VCE = 600 V Tj = 25 °C Tj = 150 °C VCE = 25 V VGE = 0 V f = 1 MHz f = 1 MHz f = 1 MHz VGE = - 8 V...+ 15 V Tj = 25 °C VCC = 300 V IC = 200 A Tj = 150 °C Tj = 150 °C RG on = 3 Ω RG off = 3 Ω Tj = 150 °C Tj = 150 °C Tj = 150 °C Eoff Tj = 150 °C Rth(j-c) per IGBT Values 600 259 196 200 400 -20 ... 20 6 -40 ... 175 284 208 200 400 1300 -40 ... 175 600 -40 ...