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MBRF835CT

Taiwan Semiconductor Company

(MBRF830CT - MBRF8100CT) Schottky Barrier Rectifiers

MBRF835CT thru MBRF8150CT Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power...


Taiwan Semiconductor Company

MBRF835CT

File Download Download MBRF835CT Datasheet


Description
MBRF835CT thru MBRF8150CT Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: ITO-220AB Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - halogen-free Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test Polarity: As marked Mounting torque: 5 in-lbs maximum Weight: 1.7 g (approximately) ITO-220AB MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) MBRF MBRF MBRF MBRF MBRF MBRF MBRF PARAMETER Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load SYMBOL VRRM VRMS VDC IF(AV) IFSM 835 CT 35 24 35 845 CT 45 31 45 850 CT 50 35 50 860 CT 60 42 60 8 150 890 CT 90 63 90 8100 CT 100 70 100 8150 CT 150 105 150 UNIT V V V A A Maximum instantaneous forward voltage (Note 1) IF= 4 A Maximum reverse current @ rated VR Voltage rate of change (Rated VR) Typical thermal resistance TJ=25 ℃ TJ=125 ℃ Operating junction temperature range Storage temperature range Note 1: Pulse test...




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