5STP38Q4200

VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 4200 V 4275 A 6715 A 60000 A 0.95 V 0.130 mΩ Doc. No. 5SYA1051-01 Sep.00 Phase Control Thyristor 5STP 38Q4200 www.DataSheet4U.com Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial applications Optimum power handling capability Interdigitated amplifying gate. Blocking Part Number VDRM VRSM1 IDRM IRRM dV/dtcrit VRRM 5STP 38Q4200 4200 V 4600 V 5STP 38Q4000 4000 V 4400 V ≤ 400 mA ≤ 400 mA 2000 V/µs 5STP 38Q3600 3600 V 4000 V Conditions f = 50 Hz, tp = 10ms tp = 5 ms, single pulse VDRM VRRM @ Exp. to 0.67xVDRM Tj = 125°C Mechanical data FM Mounting force nom. min. max. a Acceleration Device unclamped Device clamped m DS Da Weight Surface creepage distance Air strike distance 50 m/s 2.1 kg 36 mm 15 mm 2 90 kN 81 kN 108 kN 100 m/s2 ABB Semiconductors AG reserves the right to change specifications without notice. 5STP 38Q4200 On-state ITAVM ITRMS ITSM I2t Max. average on-state current Max. RMS on-state current Max. peak non-repetitive surge current Limiting load integral 4275 A 6715 A 60000 A 65000 A 18000 kA2s 17500 kA2s VT www.DataSheet4U.com VT0 Half sine wave, TC = 70°C tp tp tp tp IT IT Tj Tj Tj Tj = = = = = = 10 ms 8.3 ms 10 ms 8.3 ms 3000 A 2500 - 7500 A Tj = 125°C After surge: VD = VR = 0V On-state voltage Threshold voltage Slope resistance Holding current 1.35 V 0.95 V 0.130 mΩ 40-100 mA 20-75 mA Tj = 125°C rT IH = 25°C = 125°C =...