SSM4226M

SSM4226M/GM DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low on-resistance Simple drive requirement High VGS rating D2 D1 D1 D2 BVDSS R DS(ON) G2 S2 30V 18mΩ 8.2A ID SO-8 www.DataSheet4U.com S1 G1 Description D1 D2 Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G1 S1 G2 S2 This device is available with Pb-free lead finish (second-level interconnect) as SSM4226GM. Absolute Maximum Ratings Symbol VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 30 ± 20 8.2 6.7 30 2 0.016 -55 to 150 -55 to 150 Units V V A A A W W/°C °C °C Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 62.5 Unit °C/W 8/06/2004 Rev.1.02 www.SiliconStandard.com 1 of 4 SSM4226M/GM Electrical Characteristics @ Tj=25oC (unless otherwise specified) Symbol BVDSS Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 30 1 Typ. 0.03 15 20 5 12 12 8 31 12 320 230 Max. Units 18 28 3 1 25 ±100 30 V V/°C mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF ∆ B VDSS/∆ Tj RDS(ON) Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA Static Dra...