SSM4532M

SSM4532M COMPLEMENTARY N AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement D2 N-ch D2 D1 D1 G2 S2 BV ID DSS +30V 50mΩ +5A -30V 70mΩ -4A Low on-resistance Fast switching R DS(ON) P-ch BV DSS RDS(ON) ID SO-8 www.DataSheet4U.com S1 G1 Description MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. D1 D2 The SO-8 package is widely preferred for commercial and industrial surface mount applications and is well suited for low-voltage applications such as DC/DC converters. G1 S1 G2 S2 Absolute Maximum Ratings Symbol VDS VGS I D @ TA=25°C I D @ TA=70°C I DM PD @ TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltag Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1,4 3 3 Rating N-channel +30 ±20 +5 +4 +20 2.0 0.016 -55 to 150 -55 to 150 P-channel -30 ±20 -4 -3.2 -20 Units V V A A A W W/°C °C °C Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient Max. Value 62.5 Unit °C/W Rev.2.01 7/01/2004 www.SiliconStandard.com 1 of 11 SSM4532M N-channel Electrical Characteristics @ Tj=25oC (unless otherwise specified) Symbol BVDSS Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 30 1 Typ. 0.037 Max. Units 50 70 3 1 25 ±100 20 12 18 30 12 360 2...