AAT9512

28V N-Channel Power MOSFET General Description The AAT9512 is a low threshold MOSFET designed for the battery, cell phone, and PDA markets. Using AnalogicTech™'s ultra high density MOSFET process and space saving small outline J-lead package, performance superior to that normally found in a TSOP-6 footprint has been squeezed into the footprint of a SC70 package. www.DataSheet4U.com AAT9512 Features VDS(MAX) = 28V ID(MAX) 1 = 4.5A @ 25°C Low RDS(ON): 48 mΩ @ VGS = 4.5V 76 mΩ @ VGS = 2.5V SC70JW-8 Package Applications Battery Packs Cellular & Cordless Telephones Battery-powered portable equipment D 8 Preliminary Information Top View D 7 D 6 D 5 1 S 2 S 3 S 4 G Absolute Maximum Ratings Symbol VDS VGS ID IDM IS PD TJ, TSTG (TA=25°C unless otherwise noted) Value 28 ±12 ±4.5 ±3.6 ±20 1.2 1.6 1.0 -55 to 150 Description Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TJ=150 C 1 Units V TA = 25°C TA = 70°C 1 Pulsed Drain Current 2 Continuous Source Current (Source-Drain Diode) Maximum Power Dissipation 1 A TA = 25°C TA = 70°C Operating Junction and Storage Temperature Range W °C Thermal Characteristics Symbol RθJA RθJA2 RθJF Description Typical Junction-to-Ambient steady state Maximum Junction-to-Ambient t<5 seconds Typical Junction-to-Foot 1 1 1 Value 102 78 35 Units °C/W °C/W °C/W 9512.2003.04.0.61 1 28V N-Channel Power MOSFET Electrical Characteristics Symbol Description (TJ=25°C unless otherwise noted) Conditions Min 28 ...