5070M0Y1V0

Numonyx™ StrataFlash® Cellular Memory www.DataSheet4U.com (M18) Datasheet Product Features „ „ „ High-Performance Read, Program and Erase — 96 ns initial read access — 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output — 133 MHz with zero wait-state synchronous burst reads: 5.5 ns clock-to-data output — 8-, 16-, and continuous-word synchronous-burst Reads — Programmable WAIT configuration — Customer-configurable output driver impedance — Buffered Programming: 2.0 µs/Word (typ), 512-Mbit 65 nm; Block Erase: 0.9 s per block (typ) — 20 µs (typ) program/erase suspend Architecture — 16-bit wide data bus — Multi-Level Cell Technology — Symmetrically-Blocked Array Architecture — 256-Kbyte Erase Blocks — 1-Gbit device: Eight 128-Mbit partitions — 512-Mbit device: Eight 64-Mbit partitions — 256-Mbit device: Eight 32-Mbit partitions. — 128-Mbit device: Eight 16-Mbit partitions. — Read-While-Program and Read-While-Erase — Status Register for partition/device status — Blank Check feature Quality and Reliability — Expanded temperature: –30 °C to +85 °C — Minimum 100,000 erase cycles per block — ETOX™ X Process Technology (65 nm) — ETOX™ IX Process Technology (90 nm) „ „ „ „ Power — Core voltage: 1.7 V - 2.0 V — I/O voltage: 1.7 V - 2.0 V — Standby current: 60 µA (typ) for 512-Mbit, 65 nm — Deep Power-Down mode: 2 µA (typ) — Automatic Power Savings mode — 16-word synchronous-burst read current: 23 mA (typ) @ 108 MHz; 24 mA (typ) @ 133 MHz Software — Nu...