PMF780SN
N-channel µTrenchMOS™ standard level FET
Rev. 01 — 10 February 2004
M3D102
Product data
1. Product profile
1.1...
PMF780SN
N-channel µTrenchMOS™ standard level FET
Rev. 01 — 10 February 2004
M3D102
Product data
1. Product profile
1.1 Description
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N-channel enhancement mode field-effect
transistor in a plastic package using TrenchMOS™ technology.
1.2 Features
s Surface mounted package s Low on-state resistance s Footprint 40% smaller than SOT23 s Fast switching.
1.3 Applications
s Driver circuits s Switching in portable appliances.
1.4 Quick reference data
s VDS ≤ 60 V s Ptot ≤ 0.56 W s ID ≤ 0.57 A s RDSon ≤ 920 mΩ.
2. Pinning information
Table 1: Pin 1 2 3 Pinning - SOT323 (SC-70), simplified outline and symbol Description gate (g) source (s) drain (d)
g 1 Top view 2
MBC870
Simplified outline
3
Symbol
d
MBB076
s
SOT323 (SC-70)
Philips Semiconductors
PMF780SN
N-channel µTrenchMOS™ standard level FET
3. Ordering information
Table 2: Ordering information Package Name PMF780SN SC-70 Description Plastic surface mounted package; 3 leads Version SOT323 Type number
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4. Limiting values
Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total power dissipation storage temperature junction temperature source (diode forward) current (DC) Tsp = 25 °C peak source (diode forward) current Tsp = 25 °C; pulsed; tp ≤ 10 µs Tsp = 25 °C; VGS = 10 V; F...