Document
Under development
IGBT SPseries
CIRCUIT
SixSix-Pack 100A 600V
OUTLINE DRAWING
PTMB100A6C
www.DataSheet4U.com
Dimension(mm)
MAXMUM RATINGS (Tc=25°C) Item
Collector-Emitter Voltage Gate - Emitter Voltage Collector Current DC 1 ms
Approximate Weight : 330g
Symbol
VCES VGES IC ICP PC Tj Tstg VISO FTOR
PTMB100A6C
600 +/ - 20 100 200 TBD -40 to +150 -40 to +125 2500 2
Unit
V V A W °C °C V N•m
Collector Power Dissipation Junction Temperature Range Storage Temperature Range Isolation Voltage Terminal to Base AC, 1 min.) Module Base to Heatsink Mounting Torque Bus Bar to Main Terminals
ELECTRICAL CHARACTERISTICS (Tc=25°C) Characteristic
Collector-Emitter Cut-Off Current Gate-Emitter Leakage Current Collector-Emitter Saturation Voltage Gate-Emitter Threshold Voltage Input Capacitance Rise Time Turn-on Time Switching Time Fall Time Turn-off Time
Symbol
ICES IGES VCE(sat) VGE(th) Cies tr ton tf toff
Test Condition
VCE=600V,VGE=0V VGE=+/- 20V,VCE=0V IC=100A,VGE=15V VCE=5V,IC=100mA VCE=10V,VGE=0V,f=1MHz VCC= 300V RL= 3 ohm RG= 7.5 ohm VGE= +/- 15V
Min.
4.0 -
Typ.
2.1 10000 0.15 0.25 0.2 0.45
Max.
1.0 1.0 2.6 8.0 0.3 0.4 0.35 0.7
Unit mA µA V V pF µs
FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C) Item Symbol Rated Value
Forward Current DC 1 ms IF IFM 100 200
Unit A Typ.
1.9 0.15
Characteristic
Peak Forward Voltage Reverse Recovery Time
Symbol
VF trr
Test Condition
IF=100A,VGE=0V IF=100A,VGE=-10V,di/dt=100A/µs
Min.
-
Max.
2.4 0.25
Unit V µs Unit °C/W
THERMAL CHARACTERISTICS Characteristic
Thermal Impedance IGBT DIODE
Symbol
Rth(j-c)
Test Condition
Junction to Case
Min.
-
Typ.
-
Max.
TBD TBD
.