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P8NC60FP Dataheets PDF



Part Number P8NC60FP
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description STP8NC60FP
Datasheet P8NC60FP DatasheetP8NC60FP Datasheet (PDF)

N-CHANNEL 600V - 0.85Ω - 7A TO-220/TO-220FP PowerMesh™II MOSFET TYPE STP8NC60 STP8NC60FP www.DataSheet4U.com s s s s s STP8NC60 STP8NC60FP VDSS 600 V 600 V RDS(on) < 1.0 Ω < 1.0 Ω ID 7A 7A TYPICAL RDS(on) = 0.85Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED TO-220 3 1 2 DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of mer.

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N-CHANNEL 600V - 0.85Ω - 7A TO-220/TO-220FP PowerMesh™II MOSFET TYPE STP8NC60 STP8NC60FP www.DataSheet4U.com s s s s s STP8NC60 STP8NC60FP VDSS 600 V 600 V RDS(on) < 1.0 Ω < 1.0 Ω ID 7A 7A TYPICAL RDS(on) = 0.85Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED TO-220 3 1 2 DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVES s TO-220FP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (q) PTOT dv/dt (1) VISO Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature –65 to 150 150 (1)ISD ≤7A, di/dt ≤100A/µs, V DD ≤ V(BR)DSS, Tj ≤ TJMAX. Value STP8NC60 600 600 ±30 7 4.4 28 125 1.0 3.5 2500 7 (*) 4.4 (*) 28 (*) 30 0.24 STP8NC60FP Unit V V V A A A W W/°C V/ns V °C °C (•)Pulse width limited by safe operating area (*) Limited only by maximum temperature allowed July 2001 1/9 STP8NC60/STP8NC60FP THERMAL DATA TO-220 Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 1 62.5 300 TO-220FP 4.125 °C/W °C/W °C AVALANCHE CHARACTERISTICS Symbol IAR www.DataSheet4U.com Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value 7 300 Unit A mJ EAS ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 °C VGS = ±30V Min. 600 1 50 ±100 Typ. Max. Unit V µA µA nA ON (1) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS, ID = 250µA VGS = 10V, ID = 3.5 A Min. 2 Typ. 3 0.85 Max. 4 1.0 Unit V Ω DYNAMIC Symbol gfs (1) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS > ID(on) x RDS(on)max, ID = 3.5A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 6.7 1060 145 20 Max. Unit S pF pF pF 2/9 STP8NC60/STP8NC60FP ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr.


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