FQP8N90C/FQPF8N90C
QFET
FQP8N90C/FQPF8N90C
900V N-Channel MOSFET
General Description
These N-Channel enhancement mode p...
FQP8N90C/FQPF8N90C
QFET
FQP8N90C/FQPF8N90C
900V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, www.DataSheet4U.com planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
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Features
6.3A, 900V, RDS(on) = 1.9Ω @VGS = 10 V Low gate charge ( typical 35 nC) Low Crss ( typical 12 pF) Fast switching 100% avalanche tested Improved dv/dt capability
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G! G DS
TO-220
FQP Series
GD S
TO-220F
FQPF Series
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S
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQP8N90C 900 6.3 3.8 25
FQPF8N90C 6.3 * 3.8 * 25 * ± 30 850 6.3 17.1 4.0
Units V A A A V mJ A mJ V/ns W W/°C °C °C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C)
(Note 2) (Note 1) (Note 1) (Note 3)
- Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
171 1.37 -55 to +150 ...