®
STP12PF06
P - CHANNEL 60V - 0.18 Ω - 12A TO-220 STripFET™ POWER MOSFET
TYPE STP12PF06
s s s s
V DSS 60 V
R DS(o n)...
®
STP12PF06
P - CHANNEL 60V - 0.18 Ω - 12A TO-220 STripFET™ POWER MOSFET
TYPE STP12PF06
s s s s
V DSS 60 V
R DS(o n) < 0.20 Ω
ID 12 A
www.DataSheet4U.com s TYPICAL RDS(on)
= 0.18 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE APPLICATION ORIENTED CHARACTERIZATIONL
3 1 2
DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting
transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s MOTOR CONTROL s DC-DC & DC-AC CONVERTERS
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol V DS V DGR VGS ID ID I DM ( ) P tot dv/dt T st g Tj Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 oC Drain Current (pulsed) Total Dissipation at T c = 25 C Derating F actor Peak Diode Recovery voltage slope Storage T emperature Max. Operating Junction Temperature
o o
Value 60 60 ± 20 12 8.4 48 60 0.4 6 -65 to 175 175
Unit V V V A A A W W /o C V/ns
o o
C C
() Pulse width limited by safe operating area ( 1) ISD ≤ 12 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed
May 2000
1/8
STP12PF06
THERMAL DATA
R thj...
