L4501DW1T1

LESHAN RADIO COMPANY, LTD. Silicon NPN Epitaxial Planer Transistor Feature www.DataSheet4U.com Pb-Free Package is available. L4501DW1T1 6 5 4 1 2 3 SC-88/SOT-363 MAXIMUM RATINGS Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector current-continuoun Characteristic Total Device Dissipation FR-5 Board, (1) TA=25 C Thermal Resistance, Junction to Ambient Junction and Storage Temperature R JA o Symbol VCEO VCBO VEBO IC Ratings 50 60 7 150 Symbol PD Unit V V V mAdc Max 380 328 -55 to +150 Unit mW o THERMAL CHARATEERISTICS C/W o Tj ,Tstg C DEVICE MARKING L4501DW1T1=5H ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) Characteristic Symbol V(BR)CEO V(BR)EBO V(BR)CBO Min 50 7 60 Typ Max Unit V V V OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC=1mA) Emitter-Base Breakdown Voltage (IE=50 A) Collector-Base Breakdown Voltage (IC=50 A) Collector Cutoff Current (VCB=60V) ICBO - - 0.1 A L4501DW1T1-1/3 LESHAN RADIO COMPANY, LTD. L4501DW1T1 0.1 EMITTER CUTOFF CURRENT VEB=7V www.DataSheet4U.com IEBO - - A ON CHARACTERISTICS DC Current Gain (IC=1mA, VCE=6.0V) Collector-Emitter Saturation Voltage (IC=50mA,IB=5mA) Hfe 120 560 VCE(SAT) Ft Cobo - 180 2 0.4 3.5 V MHz Pf SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product (VCE = 12.0V; IE =-2.0 mA,f=100MHZ) Output Capacitance(VCE=12V,f=1.0MHz) ORDERING INFORMATION Device L4501DW1T1 L4501DW1T1G Marking 5H 5H (Pb-Free) Shipping 3000/Tape&Reel 3000/T...