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PNP Transistor. 2SA503 Datasheet

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PNP Transistor. 2SA503 Datasheet






2SA503 Transistor. Datasheet pdf. Equivalent




2SA503 Transistor. Datasheet pdf. Equivalent





Part

2SA503

Description

Silicon PNP Transistor



Feature


SI LICON PNP EPITAXIAL TYPE (PCT PROCESS ) HIGH FREQUENCY AMPLIFIER APPLICATION S. INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED SWITCHING APPLICATIONS. FE ATURES • High Transition Frequency : f T=80MHz (Typ.) • High Breakdown V oltage : VCEO=-80V : VcEO=- 60v (2SA50 3) (2SA504) • Low Saturation Voltage : VcE(sat)=-0.12V (at I c=-150mA, I B= -15mA) • Complementary t.
Manufacture

Toshiba

Datasheet
Download 2SA503 Datasheet


Toshiba 2SA503

2SA503; o 2SC503 and 2SC504. (Typ.) <1 X < sr d CO <6 00.45 1 11 ^05.08 A 3 M so 9 MAXIMUM RATINGS (Ta=25°C) CHARACTE RISTIC Collector-Base Voltage 2SA503 2 SA504 Collector-Emitter Voltage 2SA50 3 2SA504 SYMBOL v CBO VCEO Emitter-Ba se Voltage VEBO Collector Current ic Base Current Collector Power Dissipat ion Junction Temperature Storage Temper ature Range Ta=25°.


Toshiba 2SA503

C Tc=25°C IB PC T i T stg RATING -100 -80 -80 -60 -5 -600 -100 800 6 175 -65 VL75 UNIT V V V mA mA mW W °C °C 1. EMITTER 2. BASE 3. COLLECTOR(CASE) JE DEC EIAJ TOSHIBA TO - 39 TC - 5,TB - 5 B 2 - 8B1A Weight : 1.13g ELECTRICAL CHARACTERISTIC .


Toshiba 2SA503

.

Part

2SA503

Description

Silicon PNP Transistor



Feature


SI LICON PNP EPITAXIAL TYPE (PCT PROCESS ) HIGH FREQUENCY AMPLIFIER APPLICATION S. INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED SWITCHING APPLICATIONS. FE ATURES • High Transition Frequency : f T=80MHz (Typ.) • High Breakdown V oltage : VCEO=-80V : VcEO=- 60v (2SA50 3) (2SA504) • Low Saturation Voltage : VcE(sat)=-0.12V (at I c=-150mA, I B= -15mA) • Complementary t.
Manufacture

Toshiba

Datasheet
Download 2SA503 Datasheet




 2SA503
SI LICON PNP EPITAXIAL TYPE (PCT PROCESS)
HIGH FREQUENCY AMPLIFIER APPLICATIONS.
INDUSTRIAL APPLICATIONS
Unit in mm
HIGH SPEED SWITCHING APPLICATIONS.
FEATURES
High Transition Frequency : f T=80MHz (Typ.)
High Breakdown Voltage : VCEO=-80V
: VcEO=- 60v
(2SA503)
(2SA504)
Low Saturation Voltage : VcE(sat)=-0.12V
(at I c=-150mA, I B=-15mA)
Complementary to 2SC503 and 2SC504.
(Typ.)
<1
X
<
sr-
d CO
<6
00.45
1
11
^05.08
A 3\
M
so
9
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
Collector-Base Voltage
2SA503
2SA504
Collector-Emitter Voltage
2SA503
2SA504
SYMBOL
v CBO
VCEO
Emitter-Base Voltage
VEBO
Collector Current
ic
Base Current
Collector
Power Dissipation
Junction Temperature
Storage Temperature Range
Ta=25°C
Tc=25°C
IB
PC
T
i
T stg
RATING
-100
-80
-80
-60
-5
-600
-100
800
6
175
-65VL75
UNIT
V
V
V
mA
mA
mW
W
°C
°C
1. EMITTER
2. BASE
3. COLLECTOR(CASE)
JEDEC
EIAJ
TOSHIBA
TO - 39
TC - 5,TB - 5B
2 - 8B1A
Weight : 1.13g
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
(Ta=25°C)
SYMBOL
TEST CONDITION
MIN. TYP. MAX.
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
2SA503
2SA504
I CBO
lEBO
(^^
VCR=-80V, I E=0
V CB=-60V, IE=0
VEB=-5V, I C=0
VCE=-2V, IC=-150mA
- - -0.5
- -1.0
30 - 300
Collector- Emitter
Saturation Voltage
vCE(sat) I c=-150mA, I B=-15mA
- -0.12 -0.5
Base- Emitter
Saturation Voltage
Transition Frequency
VBE(sat)
fT
I c=-150mA, IB=-15mA
VcE=- 2v » IC=- 150mA
Collector Output Capacitance
Cob VCB=-10V,lE=0,f=lMHz
Base Intrinsic Resistance
rbb' VcE=-10V,lE=lmA,f=30MHz
Switching
Turn-on Time
ton
27QQ
OUTPUT
5
MS
'
,
mpu,t<
/pY7rr°
Time
Storage Time
Fall Time
tstg
DUTY
tf
VBb=3V Vpn=-15V
- -0.8 -1.5
50 80
- 22 30
- 12 30
- 60 -
- 450 -
- 80 -
Note : hFE Classification
: 30^90, Y : 50^150, GR : 100*300
UNIT
yA
yA
V
V
MHz
pF
Q
ns
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149




 2SA503
1
2SA503-2SA504
)
SWITCHING CHARACTERISTICS
1
V CC
±uv
"
I c - —150mA
Ig2 " 15mA
500
t
-
et(i^""
To = 25°C
300
tf
%
"on
-200
-1 -3-5 -10 -30 -100 -300
BASE CURRENT
IB1 (mA N
-600
-400
200
ic
-16
.^ -14
V CE
COMMON
EMITTER
12 -T r> n nn V.
10
-8
_-6
.-4
-2
1.
=—I B 1 niA
-1 -2 -3 -4 —5
COLLECTOR-EMITTER VOLTAGE VCE (V)
hpE - Ic
3000
1000
500
300
100
50
30
.. VCR =-2V
1
.. Tc = 100
25
' _,
)5
in
-1 -3 -10 -30 -100 -300
COLLECTOR CURRENT
I c (mA)
1 -2
-3 -4 ^^
COLLECTOR- EMITTER VOLTAGE VCE (V.1
ic VCE
COMMON
EMITTER
-20
-18
1
600 Tc ~ -55*C
-16
14
-12
b— io
__-8
-6
^200
-4
lB = 2mA
=T -2
—3 -4
-5
COLLECTOR [ITTER VOLTAGE VCE (V)
VCE( sat
—3
" COMMON EMITTE]
-l
- ic
1
T'
—0.3
—0.1
-0.05
[
Tc= 100 °C
AIII.L^52f 5
O<
O CO
—0.01
-3 -10 -30 -100 -300 -1000
COLLECTOR CURRENT I c (mA)
TOSHIBA CORPORATION llllllllllllllllllllllllllllllllllllllllllllllllllHllllllllllllllllM
-150-




 2SA503
2SA503-2SA504
1000
500
300
fT
VC E = -10V
:::-5
—3...
-3-5 -10 —30—50 -100 -300 —500
COLLECTOR CURRENT I c (mA)
c ob » c i"b
Vr
1
c.
100
^?J50
c
!i.^°6 r >.
1
1
30
>>d
5
1
0.1
0.3 0.5 1
3 5 10
30 50
REVERSE VOLTAGE VR (V)
V BE( sat - I c
]
-T)
COMMON EMITTER
-in ... Ic /Ic=10
-5
-1
HD
CO Eh
<<
ffl ra
-0.3
-0.1
... Tc=-55"C
01
25
10
-.
-1 -3 -5 -10 -30
COLLECTOR CURRENT
-100 300-500
I c (mA)
'J
5 .-t
PC Ta
T. Tc =-- Ta
INFINITE
(_
HEAT
B 1JV " ;
N
'?-
.
200X200X2 mm
HEAT SINK
(USING- RH-10)
© 100X100X2 mm Ai
HEAT SINK
(USINO RH-10)
:i) 50X50X2 mm A^
HEAT SINK
(USINQ RH-10)
1 NO HEAT SINK
heat sink With
y silicone grease to
\ keep contact
thermal
^ \A resistance small,
®
^^
s
^Xv
^
^
40 80 120 160 200 240
AMBIENT TEMPERATURE Ta CC)
TOSHIBA CORPORATIONiiilililiilitlilllftl*llllll*lllll*iiilMllliiiiiiiitliiltlllllltllttlliMiliiifilillli<llltlllllltlili*llt>lilMllltillllitilllllflllililliiitllllttlllllliniiiititltililltltlMlllilit I iiiiiiiiiiniillliiilli
151-



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