SI LICON PNP EPITAXIAL TYPE (PCT PROCESS)
HIGH FREQUENCY AMPLIFIER APPLICATIONS.
INDUSTRIAL APPLICATIONS Unit in mm
H...
SI LICON
PNP EPITAXIAL TYPE (PCT PROCESS)
HIGH FREQUENCY AMPLIFIER APPLICATIONS.
INDUSTRIAL APPLICATIONS Unit in mm
HIGH SPEED SWITCHING APPLICATIONS.
FEATURES
High Transition Frequency : f T=80MHz (Typ.)
High Breakdown Voltage : VCEO=-80V : VcEO=- 60v
(2SA503) (2SA504)
Low Saturation Voltage : VcE(sat)=-0.12V (at I c=-150mA, I B=-15mA)
Complementary to 2SC503 and 2SC504.
(Typ.)
<1
X < srd CO
<6
00.45
1
11
^05.08
A 3\
M so 9
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC Collector-Base Voltage
2SA503 2SA504
Collector-Emitter Voltage
2SA503 2SA504
SYMBOL v CBO
VCEO
Emitter-Base Voltage
VEBO
Collector Current
ic
Base Current
Collector Power Dissipation Junction Temperature
Storage Temperature Range
Ta=25°C Tc=25°C
IB
PC T
i
T stg
RATING -100 -80 -80 -60 -5
-600
-100
800
6
175
-65VL75
UNIT V
V
V mA mA mW
W
°C °C
1. EMITTER 2. BASE 3. COLLECTOR(CASE)
JEDEC EIAJ TOSHIBA
TO - 39
TC - 5,TB - 5B 2 - 8B1A
Weight : 1.13g
ELECTRICAL CHARACTERISTIC...
