C3421

2SC3421 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3421 Audio Frequency Power Amplifier Applications Unit: mm Complementary to 2SA1358 Suitable for driver of 60 to 80 watts audio amplifier High breakdown voltage www.DataSheet4U.com Absolute Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 120 120 5 1 100 1.5 10 150 −55 to 150 Unit V V V A mA W °C °C JEDEC JEITA ― ― TOSHIBA 2-8H1A Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in Weight: 0.82 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-09 2SC3421 Electrical Characteristics (Tc = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitte...