2SC3421
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3421
Audio Frequency Power Amplifier Application...
2SC3421
TOSHIBA
Transistor Silicon
NPN Epitaxial Type (PCT Process)
2SC3421
Audio Frequency Power Amplifier Applications
Unit: mm Complementary to 2SA1358 Suitable for driver of 60 to 80 watts audio amplifier High breakdown voltage
www.DataSheet4U.com
Absolute Maximum Ratings (Tc = 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 120 120 5 1 100 1.5 10 150 −55 to 150 Unit V V V A mA W °C °C
JEDEC JEITA
― ―
TOSHIBA 2-8H1A Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in Weight: 0.82 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
1
2006-11-09
2SC3421
Electrical Characteristics (Tc = 25°C)
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitte...