AP30G120W

AP30G120W Pb Free Plating Product Advanced Power Electronics Corp. Features N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR VCES ¡¿ ¡¿ ¡¿ ¡¿ 1200V 30A C High speed switching Low Saturation Voltage VCE(sat)=3.0V@IC=30A Industry Standard TO-3P Package RoHS Compliant IC G G C E TO-3P E www.DataSheet4U.com Absolute Maximum Ratings Symbol VCES VGE IC@TC=25¢J IC@TC=100¢J ICM PD@TC=25¢J TSTG TJ TL Gate-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current 1 Parameter Collector-Emitter Voltage Rating 1200 ±30 60 30 160 208 -55 to 150 -55 to 150 300 Units V V A A A W ¢J ¢J ¢J Maximum Power Dissipation Storage Temperature Range Operating Junction Temperature Range Maximum Lead Temp. for Soldering Purposes , 1/8" from case for 5 seconds . Notes: 1.Repetitive rating : Pulse width limited by max . junction temperature . Thermal Data Symbol Rthj-c Rthj-a Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Parameter Value 0.6 40 Units ¢J /W ¢J /W Electrical Characteristics@T j=25oC(unless otherwise specified) Symbol BVCES IGES ICES VCE(sat) VGE(th) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Cies Coes Cres Parameter Collect-to-Emitter Breakdown Voltage Gate-to-Emitter Leakage Current Collector-Emitter Leakage Current Collector-Emitter Saturation Voltage Gate Threshold Voltage Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-On Switching Loss Turn...