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L2N7002LT1 Dataheets PDF



Part Number L2N7002LT1
Manufacturers Leshan Radio Company
Logo Leshan Radio Company
Description Small Signal MOSFET
Datasheet L2N7002LT1 DatasheetL2N7002LT1 Datasheet (PDF)

LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–23 • Pb−Free Package is Available. L2N7002LT1 3 1 2 www.DataSheet4U.com MAXIMUM RATINGS Rating Drain–Source Voltage Drain–Gate Voltage (RGS = 1.0 MΩ) Drain Current – Continuous TC = 25°C (Note 1.) – Continuous TC = 100°C (Note 1.) – Pulsed (Note 2.) Gate–Source Voltage – Continuous – Non–repetitive (tp ≤ 50 µs) Symbol VDSS VDGR ID ID IDM Value 60 60 ±ā115 ±ā75 ±ā800 Unit Vdc Vdc mAdc CASE 318, STYLE 21 SOT– 23 .

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LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–23 • Pb−Free Package is Available. L2N7002LT1 3 1 2 www.DataSheet4U.com MAXIMUM RATINGS Rating Drain–Source Voltage Drain–Gate Voltage (RGS = 1.0 MΩ) Drain Current – Continuous TC = 25°C (Note 1.) – Continuous TC = 100°C (Note 1.) – Pulsed (Note 2.) Gate–Source Voltage – Continuous – Non–repetitive (tp ≤ 50 µs) Symbol VDSS VDGR ID ID IDM Value 60 60 ±ā115 ±ā75 ±ā800 Unit Vdc Vdc mAdc CASE 318, STYLE 21 SOT– 23 (TO–236AB) 115 mAMPS 60 VOLTS R DS(on) = 7.5 W N - Channel 3 VGS VGSM ±ā20 ±ā40 Vdc Vpk THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR–5 Board (Note 3.) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(Note 4.) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 556 300 2.4 RθJA TJ, Tstg 417 –ā55 to +150 °C/W °C Unit 1 mW mW/°C 2 RθJA PD °C/W mW mW/°C MARKING DIAGRAM & PIN ASSIGNMENT Drain 3 702 W 1 2 1. The Power Dissipation of the package may result in a lower continuous drain current. 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%. 3. FR–5 = 1.0 x 0.75 x 0.062 in. 4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina. Gate 702 W Source = Device Code = Work Week ORDERING INFORMATION Device L2N7002LT1 L2N7002LT1G Marking 702 702(Pb-Free) Shipping 3000 Tape & Reel 3000 Tape & Reel L2N7002LT1–1/3 LESHAN RADIO COMPANY, LTD. L2N7002LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0, ID = 10 µAdc) Zero Gate Voltage Drain Current (VGS = 0, VDS = 60 Vdc) TJ = 25°C TJ = 125°C V(BR)DSS IDSS IGSSF IGSSR 60 – – – – – – – – – – 1.0 500 100 –100 Vdc µAdc nAdc nAdc www.DataSheet4U.com Gate–Body Leakage Current, Forward (VGS = 20 Vdc) Gate–Body Leakage Current, Reverse (VGS = –ā20 Vdc) ON CHARACTERISTICS (Note 2.) Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) On–State Drain Current (VDS ≥ 2.0 VDS(on), VGS = 10 Vdc) Static Drain–Source On–State Voltage (VGS = 10 Vdc, ID = 500 mAdc) (VGS = 5.0 Vdc, ID = 50 mAdc) Static Drain–Source On–State Resistance (VGS = 10 V, ID = 500 mAdc) TC = 25°C TC = 125°C (VGS = 5.0 Vdc, ID = 50 mAdc) TC = 25°C TC = 125°C Forward Transconductance (VDS ≥ 2.0 VDS(on), ID = 200 mAdc) VGS(th) ID(on) VDS(on) – – rDS(on) – – – – gFS 80 1.4 – 1.8 – – 7.5 13.5 7.5 13.5 – mmhos – – 3.75 0.375 Ohms 1.0 500 1.6 – 2.5 – Vdc mA Vdc DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Ciss Coss Crss – – – 17 10 2.5 50 25 5.0 pF pF pF SWITCHING CHARACTERISTICS (Note 2.) Turn–On Delay Time Turn–Off Delay Time (V DD = 25 Vdc , ID ^ 500 mAdc, RG = 25 Ω, RL = 50 Ω, Vgen = 10 V) td(on) td(off) – – 7 11 20 40 ns ns BODY–DRAIN DIODE RATINGS Diode Forward On–Voltage (IS = 11.5 mAdc, VGS = 0 V) Source Current Continuous (Body Diode) Source Current Pulsed 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%. VSD IS ISM – – – – – – –1.5 –115 –800 Vdc mAdc mAdc L2N7002LT1–2/3 LESHAN RADIO COMPANY, LTD. L2N7002LT1 TYPICAL ELECTRICAL CHARACTERISTICS 2.0 1.8 I D, DRAIN CURRENT (AMPS) 1.6 1.4 www.DataSheet4U.com 1.2 1.0 0.8 0.6 0.4 0.2 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VDS, DRAIN SOURCE VOLTAGE (VOLTS) TA = 25°C VGS = 10 V 9V 8V 7V 6V 5V 4V 3V 9.0 10 I D, DRAIN CURRENT (AMPS) 0.8 0.6 0.4 0.2 1.0 VDS = 10 V -ā55°C 125°C 25°C 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VGS, GATE SOURCE VOLTAGE (VOLTS) 9.0 10 Figure 1. Ohmic Region Figure 2. Transfer Characteristics r DS(on) , STATIC DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -ā60 -ā20 +ā20 +ā60 T, TEMPERATURE (°C) +ā100 +ā140 VGS = 10 V ID = 200 mA VGS(th), THRESHOLD VOLTAGE (NORMALIZED) 2.4 1.2 1.05 1.1 1.10 1.0 0.95 0.9 0.85 0.8 0.75 0.7 -ā60 -ā20 +ā20 +ā60 T, TEMPERATURE (°C) +ā100 +ā140 VDS = VGS ID = 1.0 mA Figure 3. Temperature versus Static Drain–Source On–Resistance Figure 4. Temperature versus Gate Threshold Voltage L2N7002LT1–3/3 .


TG16C L2N7002LT1 2SD129


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