APT4012SVFR

APT4012BVFR APT4012SVFR 400V 37A BVFR 0.120Ω D3PAK POWER MOS V ® FREDFET TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. www.DataSheet4U.com SVFR Faster Switching Lower Leakage Avalanche Energy Rated TO-247 or Surface Mount D3Pak G D Fast Recovery Body Diode MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 S All Ratings: TC = 25°C unless otherwise specified. APT4012BVFR_SVFR UNIT Volts Amps 400 37 148 ±30 ±40 370 2.96 -55 to 150 300 37 30 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/°C °C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 1300 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current 2 MIN TYP MAX UNIT Volts Amps 400 37 0.12 250 1000 2 4 ±100 (VDS > ID(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-...