APT40GP60B2DQ2

TYPICAL PERFORMANCE CURVES ® APT40GP60B2DQ2 APT40GP60B2DQ2G* APT40GP60B2DQ2(G) 600V *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. Low Conduction Loss Low Gate Charge Ultrafast Tail Current shutoff www.DataSheet4U.com 100 kHz operation @ 400V, 41A 200 kHz operation @ 400V, 26A SSOA Rated G C E C G E MAXIMUM RATINGS Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current 7 All Ratings: TC = 25°C unless otherwise specified. APT40GP60B2DQ2(G) UNIT Volts 600 ±20 @ TC = 25°C 100 62 160 160A @ 600V 543 -55 to 150 300 Watts °C Amps Continuous Collector Current @ TC = 110°C Pulsed Collector Current 1 @ TC = 150°C Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 250µA) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25°C) MIN TYP MAX Units 600 3 4.5 2.2 2.1 500 2 6 2.7 Collector-Emitter On Voltage (VGE = 15V, I C = 40A, ...