POWER MOS V FREDFET
400V
57A
APT40M70B2VFR
*G
APT40M70LVFR
0.070Ω
APT40M70B2VFRG* APT40M70LVFRG*
Denotes RoHS Compliant, Pb Free Termin...
Description
400V
57A
APT40M70B2VFR
*G
APT40M70LVFR
0.070Ω
APT40M70B2VFRG* APT40M70LVFRG*
Denotes RoHS Compliant, Pb Free Terminal Finish.
POWER MOS V
®
FREDFET
B2VFR
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. www.DataSheet4U.com
T-MAX™
TO-264
LVFR
T-MAX™ or TO-264 Package Faster Switching Lower Leakage
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage
Avalanche Energy Rated FAST RECOVERY BODY DIODE
G
D
S
All Ratings: TC = 25°C unless otherwise specified.
APT40M70B2_LVFR(G) UNIT Volts Amps
400 57 228 ±30 ±40 520 4.16 -55 to 150 300 57 50
4 1
Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/°C °C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
2500
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current
2
MIN
TYP
MAX
UNIT Volts Amps
...
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