APT40M70JVFR

APT40M70JVFR 400V 53A 0.070Ω S G D S POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. www.DataSheet4U.com SO ISOTOP ® 2 T- 27 "UL Recognized" Faster Switching Lower Leakage Popular SOT-227 Package Avalanche Energy Rated FAST RECOVERY BODY DIODE G D S MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 All Ratings: TC = 25°C unless otherwise specified. APT40M70JVFR UNIT Volts Amps 400 53 212 ±30 ±40 450 3.6 -55 to 150 300 53 50 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/°C °C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 2500 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance 2 MIN TYP MAX UNIT Volts 400 0.07 250 1000 ±100 2 4 (VGS = 10V, 26.5A) Ohms µA 2-2005 050-5893 Rev A Zero Gate Voltage...