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APT41H50S

Microsemi Corporation

N-Channel FREDFET

APT41H50B APT41H50S 500V, 41A, 0.15Ω Max, trr, ≤215ns N-Channel Ultrafast Recovery FREDFET Power MOS 8™ is a high speed...


Microsemi Corporation

APT41H50S

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Description
APT41H50B APT41H50S 500V, 41A, 0.15Ω Max, trr, ≤215ns N-Channel Ultrafast Recovery FREDFET Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for maximum reliability in ZVS phase shifted bridge and other circuits through much reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. TO -2 47 D3PAK APT41H50B APT41H50S D Single die FREDFET G S www.DataSheet4U.com FEATURES Fast switching with low EMI Very Low trr for maximum reliability Ultra low Crss for improved noise immunity Low gate charge Avalanche energy rated RoHS compliant TYPICAL APPLICATIONS ZVS phase shifted and other full bridge Half bridge UPS Welding Solar inverters Telecom rectifiers Absolute Maximum Ratings Symbol ID IDM VGS EAS IAR Parameter Continuous Drain Current @ TC = 25°C Continuous Drain Current @ TC = 100°C Pulsed Drain Current Gate-Source Voltage Single Pulse Avalanche Energy 2 Avalanche Current, Repetitive or Non-Repetitive 1 Ratings 41 26 135 ±30 930 21 Unit A V mJ A Thermal and Mechanical Characteristics Symbol PD Rθ...




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