Document
APT43M60B2 APT43M60L
600V, 45A, 0.15Ω Max
N-Channel MOSFET
Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. Reliability in flyback, boost, forward, and other circuits is enhanced by the high avalanche energy capability.
T-Ma x ®
TO-264
APT43M60B2
APT43M60L D
Single die MOSFET G S
FEATURES
• Fast switching with low EMI/RFI • Low RDS(on) • Ultra low Crss for improved noise immunity • Low gate charge • Avalanche energy rated • RoHS compliant
TYPICAL APPLICATIONS
• PFC and other boost converter • Buck converter • Two switch forward (asymmetrical bridge) • Single switch forward • Flyback • Inverters
Absolute Maximum Ratings
Symbol Parameter
ID
Continuous Drain Current @ TC = 25°C Continuous Drain Current @ TC = 100°C
IDM
Pulsed Drain Current 1
VGS Gate-Source Voltage
EAS Single Pulse Avalanche Energy 2
IAR
Avalanche Current, Repetitive or Non-Repetitive
Thermal and Mechanical Characteristics
Symbol Characteristic
PD RθJC
Total Power Dissipation @ TC = 25°C Junction to Case Thermal Resistance
RθCS Case to Sink Thermal Resistance, Flat, Greased Surface
TJ,TSTG Operating and Storage Junction Temperature Range
TL
Soldering Temperature for 10 Seconds (1.6mm from case)
WT
Package Weight
Torque Mounting Torque ( TO-264 Package), 4-40 or M3 screw
Ratings
Unit
45
28
A
160
±30
V
1200
mJ
21
A
Min Typ Max Unit
780
W
0.16 °C/W
0.11
-55
150
°C
300
0.22
oz
6.2
g
10 in·lbf
1.1 N·m
Microsemi Website - http://www.microsemi.com
050-8070 Rev E 7-2011
Static Characteristics
TJ = 25°C unless otherwise specified
Symbol Parameter
Test Conditions
Min
VBR(DSS) ∆VBR(DSS)/∆TJ
RDS(on) VGS(th) ∆VGS(th)/∆TJ
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source On Resistance 3 Gate-Source Threshold Voltage Threshold Voltage Temperature Coefficient
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 250μA
VGS = 10V, ID = 21A
VGS = VDS, ID = 2.5mA
600 3
IDSS
Zero Gate Voltage Drain Current
VDS = 600V VGS = 0V
TJ = 25°C TJ = 125°C
IGSS
Gate-Source Leakage Current
VGS = ±30V
APT43M60B2_L
Typ Max Unit
V
0.57
V/°C
0.13 0.15
Ω
4
5
V
-10
mV/°C
100
μA
500
±100 nA
Dynamic Characteristics
Symbol gfs Ciss Crss Coss
Parameter Forward Transconductance Input Capacitance Reverse Transfer Capacitance Output Capacitance
TJ = 25°C unless otherwise specified
Test Conditions
Min
VDS = 50V, ID = 21A
VGS = 0V, VDS = 25V
f = 1MHz
Co(cr) 4 Co(er) 5
Effective Output Capacitance, Charge Related Effective Output Capacitance, Energy Related
VGS = 0V, VDS = 0V to 400V
Qg.