Super Junction MOSFET
APT47N60BC3 APT47N60SC3
600V 47A 0.070Ω
D3PAK
Super Junction MOSFET
TO-247
C O OLMOS
Power Semiconductors
• Ultra low...
Description
APT47N60BC3 APT47N60SC3
600V 47A 0.070Ω
D3PAK
Super Junction MOSFET
TO-247
C O OLMOS
Power Semiconductors
Ultra low RDS(ON) Low Miller Capacitance Ultra Low Gate Charge, Qg www.DataSheet4U.com Avalanche Energy Rated TO-247 or Surface Mount D3PAK Package
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL
dv/ dt
D G S
All Ratings: TC = 25°C unless otherwise specified.
APT47N60BC3_SC3 UNIT Volts Amps
Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current
1
600 47 141 ±20 ±30 417 3.33 -55 to 150 260 50 20 1
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Drain-Source Voltage slope (VDS = 480V, ID = 47A, TJ = 125°C) Repetitive Avalanche Current Repetitive Avalanche Energy
7 7
Volts Watts W/°C °C V/ns Amps mJ
IAR EAR EAS
Single Pulse Avalanche Energy
1800
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
600 0.06 0.5 0.07 25 250 ±100 2.10 3 3.9
(VGS = 10V, ID = 30A)
Ohms µA nA Volts
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V, TJ = 150°C) Gate-Source Leakage Current (VGS = ±20V, VDS = 0V) Gate Threshold Voltage (VDS...
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