Document
Ultra-Low VCE(sat) IGBT with Diode
IXGH 38N60U1
VCES I C25 VCE(sat)
= 600 V = 76 A = 1.8 V
Combi Pack
www.DataSheet4U.com Symbol
Test Conditions TJ = 25°C to 150 °C TJ = 25°C to 150 °C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load, L = 100 µ H TC = 25°C
Maximum Ratings 600 600 ±20 ±30 76 38 152 ICM = 76 @ 0.8 VCES 200 -55 ... +150 150 -55 ... +150 V V V V A A A A
TO-247 AD
V CES V CGR V GES V GEM I C25 I C90 I CM SSOA (RBSOA) PC TJ T JM Tstg Md Weight
G
C
E C = Collector, TAB = Collector
G = Gate, E = Emitter,
Features W °C °C °C
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Mounting torque (M3)
1.13/10 Nm/lb.in. 6 300 g °C
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Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
International standard package JEDEC TO-247 AD IGBT and anti-parallel FRED in one package 2nd generation HDMOSTM process Low VCE(sat) - for minimum on-state conduction losses MOS Gate turn-on - drive simplicity Fast Recovery Epitaxial Diode (FRED) - soft recovery with low IRM
Applications
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Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 2.5 TJ = 25°C TJ = 125° C 5.5 500 8 ±100 1.8 V V µA mA nA V
BV CES V GE(th) I CES I GES V CE(sat)
IC IC
= 750 µ A, VGE = 0 V = 250 µ A, VCE = VGE
AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies
Advantages
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VCE = 0.8 • VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V
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Space savings (two devices in one package) Easy to mount with 1 screw (isolated mounting screw hole) Reduces assembly time and cost High power density
© 1996 IXYS All rights reserved
94528B (3/96)
IXGH 38N60U1
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 15 20 2500 VCE = 25 V, VGE = 0 V, f = 1 MHz 270 70 125 23 50 Inductive load, T J = 25°C IC = IC90 , VGE = 15 V, L = 100 µH, VCE = 0.8 VCES, RG = Roff = 10 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG Inductive load, TJ = 125 °C IC = IC90, VGE = 15 V, L = 100 µ H VCE = 0.8 V CES, RG = Roff = 10 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG 30 150 600 500 9 40 160 1 800 1000 15 1200 700 15 150 35 75 S pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ 0.62 K/W 0.25 K/W
1 = Gate 2 = Collector 3 = Emitter Tab = Collector
TO-247 AD Outline
gfs Cies Coes Cres Qg
I C = IC90; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qge www.DataSheet4U.com Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK
Reverse Diode (FRED) Symbol VF I RM trr RthJC Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1.6 10 150 35 15 50 V A ns ns
IF = IC90, VGE = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % IF = IC.