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IXGH32N50BS

IXYS Corporation

HiPerFAST IGBT

Preliminary Data Sheet HiPerFASTTM IGBT IXGH32N50B VCES IXGH32N50BS I C25 VCE(sat) tfi TO-247 SMD (32N50BS) = = = = ...


IXYS Corporation

IXGH32N50BS

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Preliminary Data Sheet HiPerFASTTM IGBT IXGH32N50B VCES IXGH32N50BS I C25 VCE(sat) tfi TO-247 SMD (32N50BS) = = = = 500 V 60 A 2.0 V 80 ns www.DataSheet4U.com Symbol VCES VCGR V GES V GEM I C25 I C90 I CM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125° C, RG = 33 Ω Clamped inductive load, L = 100 µH TC = 25°C Maximum Ratings 500 500 ±20 ±30 60 32 120 ICM = 64 @ 0.8 VCES 200 -55 ... +150 150 -55 ... +150 300 V V V V A A A A W °C °C °C °C Features l G E C (TAB) TO-247 AD C (TAB) G C E C = Collector, TAB = Collector G = Gate, E = Emitter, Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque (M3) 1.13/10 Nm/lb.in. TO-247 AD TO-247 SMD 6 4 g g l l l International standard packages JEDEC TO-247 SMD surface mountable and JEDEC TO-247 AD High current handling capability Newest generation HDMOSTM process MOS Gate turn-on - drive simplicity Symbol Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) min. typ. max. 500 2.5 TJ = 25°C TJ = 125°C V V µA mA nA V Applications l l l l l l BVCES VGE(th) I CES I GES VCE(sat) IC IC = 250 µA, VGE = 0 V = 250 µA, VCE = VGE 5 200 1 ±100 2.0 V CE = 0.8 VCES VGE = 0 V V CE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V PFC circuits AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) S...




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