HiPerFAST IGBT
Preliminary Data Sheet
HiPerFASTTM IGBT
IXGH32N50B VCES IXGH32N50BS I C25 VCE(sat) tfi
TO-247 SMD (32N50BS)
= = = =
...
Description
Preliminary Data Sheet
HiPerFASTTM IGBT
IXGH32N50B VCES IXGH32N50BS I C25 VCE(sat) tfi
TO-247 SMD (32N50BS)
= = = =
500 V 60 A 2.0 V 80 ns
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Symbol VCES VCGR V GES V GEM I C25 I C90 I CM SSOA (RBSOA) PC TJ TJM Tstg
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125° C, RG = 33 Ω Clamped inductive load, L = 100 µH TC = 25°C
Maximum Ratings 500 500 ±20 ±30 60 32 120 ICM = 64 @ 0.8 VCES 200 -55 ... +150 150 -55 ... +150 300 V V V V A A A A W °C °C °C °C Features
l
G E
C (TAB)
TO-247 AD
C (TAB) G C E C = Collector, TAB = Collector
G = Gate, E = Emitter,
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque (M3)
1.13/10 Nm/lb.in. TO-247 AD TO-247 SMD 6 4 g g
l l l
International standard packages JEDEC TO-247 SMD surface mountable and JEDEC TO-247 AD High current handling capability Newest generation HDMOSTM process MOS Gate turn-on - drive simplicity
Symbol
Test Conditions
Characteristic Values (TJ = 25° C, unless otherwise specified) min. typ. max. 500 2.5 TJ = 25°C TJ = 125°C V V µA mA nA V
Applications
l l l l l l
BVCES VGE(th) I CES I GES VCE(sat)
IC IC
= 250 µA, VGE = 0 V = 250 µA, VCE = VGE
5 200 1 ±100 2.0
V CE = 0.8 VCES VGE = 0 V V CE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V
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