MT6L57AE

MT6L57AE TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L57AE VHF~UHF Band Low Noise Amplifier Applications Two devices are built in to the super-thin and extreme super mini (6 pins) package: ES6 Unit: mm Mounted Devices www.DataSheet4U.com Q1: SSM (TESM) Three-pins (SSM/TESM) mold products are corresponded. MT3S06S (MT3S06T) Q2: SSM (TESM) MT3S04AS (MT3S04AT) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC (Note 1) Tj Tstg Q1 10 5 1.5 15 7 100 125 −55~125 Q2 10 5 2 40 10 Unit V V V mA mA mW °C °C JEDEC JEITA TOSHIBA ― ― 2-2N1C Weight: 0.003 g (typ.) Note 1: Total power dissipation of Q1 and Q2. Marking Pin Assignment (top view) 1 2003-07-31 MT6L57AE Electrical Characteristics Q1 (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current DC current gain Transition frequency Insertion gain Symbol ICBO IEBO hFE fT S21e2 (1) S21e2 (2) NF (1) NF (2) Cre Test Condition VCB = 5 V, IE = 0 VEB = 1 V, IC = 0 VCE = 1 V, IC = 5 mA VCE = 3 V, IC = 5 mA VCE = 1 V, IC = 5 mA, f = 2 GHz VCE = 3 V, IC = 7 mA, f = 2 GHz VCE = 1 V, IC = 3 mA, f = 2 GHz VCE = 3 V, IC = 3 mA, f = 2 GHz VCB = 1 V, IE = 0, f = 1 MHz (Note 2) Min   70 7  4.5    Typ.    10 7.5 8 1.7 1.6 0.35 Max 0.1 1 140    3 3 0.75 GHz dB Unit µA µA Noise figure www.DataS...