MT6L67FS
TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE
MT6L67FS
VHF~UHF BAND LOW NOISE AMPLI...
MT6L67FS
TOSHIBA
TRANSISTOR SILICON, SILICON GERMANIUM
NPN EPITAXIAL PLANAR TYPE
MT6L67FS
VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
Two devices are built in to the fine pich small mold package (6pins):fs6
0.1±0.05 1.0±0.05 0.8±0.05
Unit: mm
0.1±0.05 0.15±0.05
It exsels in the buffer and oscillation use.
0.35 0.35 1.0±0.05 0.7±0.05 1 2 3
+0.02 -0.04
Mounted Devices
www.DataSheet4U.com Three-pin fSM mold products are corresponded
Q1 MT3S36FS Q2 MT3S106FS
6 5 4 0.1±0.05
Absolute Maximum Ratings (Ta = 25°C)
CHARACTERISTICS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector power dissipation Junction temperature Storage temperature range SYMBOL VCBO VCEO VEBO IC IB PC (Note 1) Tj Tstg RATING Q1 8 4.5 1.5 36 18 100 110 (Note 2) 125 −55~125 Q2 13 6 1 80 20 UNIT V V V mA mA mW °C °C
0.48
1.COLLECTOR 1 2.EMITTER1 3.COLLECTOR2 4.BASE2 5.EMITTER2 6.BASE1
fS6 JEDEC JEITA TOSHIBA Weight: 0.001g (typ.) ― ― 2-1F1A
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individu...