LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
3 COLLECTOR
L2SA1037AK*LT1
3
www.DataSheet4U.com
...
LESHAN RADIO COMPANY, LTD.
General Purpose
Transistors
PNP Silicon
3 COLLECTOR
L2SA1037AK*LT1
3
www.DataSheet4U.com
1 BASE 1 2 EMITTER 2
SOT– 23
MAXIMUM RATINGS
Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Collector power dissipation Junction temperature Storage temperature Symbol V CEO V CBO V
EBO
Value –50 –60 –6.0 –150 0.2 150 -55 ~+150
Unit V V V mAdc W °C °C
IC PC Tj T stg
DEVICE MARKING
L2SA1037AKQLT1 =FQ L2SA1037AKSLT1 =G3F L2SA1037AKRLT1 =FR
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic Collector–Emitter Breakdown Voltage (IC = –1 mA) Emitter–Base Breakdown Voltage (IE = – 50 µA) Collector–Base Breakdown Voltage (IC = – 50 µA) Collector Cutoff Current (VCB = – 60 V) Emitter cutoff current (VEB = – 6 V) Collector-emitter saturation voltage (IC/ IB = – 50 mA / – 5m A) DC current transfer ratio (V CE = – 6 V, I C= –1mA) Transition frequency (V CE = – 12 V, I E= 2mA, f=30MHz ) Output capacitance (V CB = – 12 V, I E= 0A, f =1MHz ) Symbol V
(BR)CEO
Min – 50 –6 – 60 — — — 120 — —
Typ — — — — — — –– 140 4.0
Max — — — – 0.1 – 0.1 -0.5 560 –– 5.0
Unit V V V µA µA V –– MHz pF
V (BR)EBO V
(BR)CBO
I CBO I EBO V CE(sat) h FE fT C ob
h FE values are classified as follows:
hFE
*
Q 120~270
R 180~390
S 270~560
LM35–1/3
LESHAN RADIO COMPANY, LTD.
L2SA1037AK*LT1
Fig.1 Grounded emitter propagation characteristics
–50
Fig.2 Grounded emitter output characteristics( )
–10
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