L2SC3356LT1

DATA SHEET LESHAN RADIO COMPANY, LTD. L2SC3356LT1 3 DESCRIPTION www.DataSheet4U.com 1 2 The L2SC3356LT1 is an NPN silicon epitaxial transistor designed for It has dynamic range and good current characteristic. low noise amplifier at VHF, UHF and CATV band. SOT-23 FEATURES Low Noise and High Gain NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz High Power Gain MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz ABSOLUTE MAXIMUM RATINGS (TA = 25
C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PT Tj Tstg 65 20 12 3.0 100 200 150 to +150 V V V mA mW
C
C ELECTRICAL CHARACTERISTICS (TA = 25
C) CHARACTERISTIC Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Feed-Back Capacitance Insertion Power Gain Noise Figure SYMBOL ICBO IEBO hFE fT Cre** 82 170 7 0.55 11.5 1.1 2.0 1.0 MIN. TYP. MAX. 1.0 1.0 270 GHz pF dB dB UNIT TEST CONDITIONS VCB = 10 V, IE = 0 VEB = 1.0 V, IC = 0 VCE = 10 V, IC = 20 mA VCE = 10 V, IC = 20 mA VCB = 10 V, IE = 0, f = 1.0 MHz VCE = 10 V, IC = 20 mA, f = 1.0 GHz VCE = 10 V, IC = 7 mA, f = 1.0 GHz
A
A
S21e
2 NF * Pulse Measurement PW  350
s, Duty Cycle  2 % ** The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance bridge. Driver Marking L2SC3356LT1=R24 L2SC3356LT1-1/4 LESHAN RADIO COMP...