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CGH35030F Dataheets PDF



Part Number CGH35030F
Manufacturers Cree
Logo Cree
Description GaN HEMT
Datasheet CGH35030F DatasheetCGH35030F Datasheet (PDF)

PRELIMINARY CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied in a ceramic/metal flange package. www.DataSheet4U.com Package Type : 440166 PN: CGH3503 0F Typical Performance Over 3.3-3.7GHz Parameter Small Sign.

  CGH35030F   CGH35030F


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