CGH40025F

PRELIMINARY CGH40025F 25 W, RF Power GaN HEMT Cree’s CGH40025 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40025, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40025 ideal for linear and compressed amplifier circuits. www.DataSheet4U.com The transistor is available in a screw-down, flange package. Package Type : 440166 PN: CGH4002 5F FEATURES Up to 4 GHz Operation 16 dB Small Signal Gain at 2.0 GHz 13 dB Small Signal Gain at 4.0 GHz 30 W typical P3dB 62 % Efficiency at P3dB 28 V Operation APPLICATIONS 2-Way Private Radio Broadband Amplifiers Cellular Infrastructure Test Instrumentation Class A, AB, Linear amplifiers suitable for OFDM, W-CDMA, EDGE, CDMA waveforms 2007 Rev 1.0 – May Subject to change without notice. www.cree.com/wireless  Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Drain-Source Voltage Gate-to-Source Voltage Storage Temperature Operating Junction Temperature Maximum Forward Gate Current Soldering Temperature Thermal Resistance, Junction to Case 1 Symbol VDSS VGS TSTG TJ IGMAX TS RθJC Rating 84 -10, +2 -55, +150 175 4.0 245 3.8 Units Volts Volts ˚C ˚C mA ˚C ˚C/W www.DataSheet4U.com Note: 1 Measured for the CGH40025F at PDISS = 28 W. Electrical Characteristics (TC = 25˚C) Characteristic...