CGH40045

PRELIMINARY CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40045 ideal for linear and compressed amplifier circuits. www.DataSheet4U.com The transistor is available in a flange package. Package Type s: 440193 PN: CGH4004 5F FEATURES Up to 4 GHz Operation >16 dB Small Signal Gain at 2.0 GHz 12 dB Small Signal Gain at 4.0 GHz 55 W Typical P3dB 55 % Efficiency at P3dB 28 V Operation APPLICATIONS 2-Way Private Radio Broadband Amplifiers Cellular Infrastructure Test Instrumentation Class A, AB, Linear amplifiers suitable for OFDM, W-CDMA, EDGE, CDMA waveforms ch 2007 Rev 1.1 – Mar Subject to change without notice. www.cree.com/wireless  Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Drain-Source Voltage Gate-to-Source Voltage Storage Temperature Operating Junction Temperature Maximum Forward Gate Current Soldering Temperature Thermal Resistance, Junction to Case 1 Symbol VDSS VGS TSTG TJ IGMAX TS RθJC Rating 84 -10, +2 -55, +150 175 15 245 2.7 Units Volts Volts ˚C ˚C mA ˚C ˚C/W www.DataSheet4U.com Note: 1 Measured for the CGH40045F at 43W PDISS. Electrical Characteristics (TC = 25˚C) Characteristics DC Charact...