IXST30N60BD1

High Speed IGBT with Diode IXSH 30N60BD1 IXSK 30N60BD1 IXST 30N60BD1 VCES IC25 VCE(sat) Short Circuit SOA Capability tfi = 600 V = 55 A = 2.0 V = 140 ns www.DataSheet4U.com Symbol VCES VCGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 10 W Clamped inductive load, VCL = 0.8 VCES VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 33 W, non repetitive TC = 25°C Maximum Ratings 600 600 ±20 ±30 55 30 110 ICM = 60 10 200 -55 ... +150 150 -55 ... +150 V V V V A A A A ms W °C °C °C °C g g TO-247AD (IXSH) VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Md G C E TO-268 (D3) (IXST) G E C TO-264 (IXSK) G C E C = Collector TAB = Collector G = Gate E = Emitter Mounting torque 1.13/10 Nm/lb.in. 300 TO-247/TO-268 TO-264 6/4 10 Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Weight Features International standard packages: JEDEC TO-247, TO-264& TO-268 Short Circuit SOA capability Medium freqeuncy IGBT and antiparallel FRED in one package New generation HDMOSTM process Applications AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies Advantages Space savings (two devices in one package) Easy to mount with 1 screw (isolated mounting screw hole) Surface mountable, high power case style Reduces assembly time and cost ...