IXSH30N60A

Low VCE(sat) IGBT High Speed IGBT Short Circuit SOA Capability VCES IXSH/IXSM IXSH/IXSM 30N60 30N60A 600 V 600 V IC25 50 A 50 A VCE(sat) 2.5 V 3.0 V www.DataSheet4U.com Symbol VCES Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 4.7 Ω Clamped inductive load, L = 100 µH VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 33 Ω, non repetitive TC = 25°C Maximum Ratings 600 600 ±20 ±30 50 30 100 ICM = 60 @ 0.8 VCES 10 200 -55 ... +150 150 -55 ... +150 V V V V A A A A µs TO-247 AD (IXSH) VCGR V GES V GEM I C25 I C90 I CM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Md Weight G C E TO-204 AE (IXSM) C W °C °C °C G = Gate, E = Emitter, C = Collector, TAB = Collector Features l l Mounting torque 1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g 300 °C Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s l l l Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 5 TJ = 25°C TJ = 125°C 8 100 1 ±100 30N60 30N60A 2.5 3.0 V V µA mA nA V V l International standard packages Guaranteed Short Circuit SOA capability Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplicity Fast Fall Time for switching speeds up to 20 kHz BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250 µA, VGE = 0 V = 2.5 mA, VCE = VGE Applications l l l VCE = 0.8 • VCES VGE = 0 V VC...