IXSN35N100U1

IGBT with Diode IXSN 35N100U1 VCES IC25 VCE(sat) = 1000 V = 38 A = 3.5 V High Short Circuit SOA Capability 3 2 4 www.DataSheet4U.com 1 Symbol V CES Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150° C; RGE = 1 MΩ Continuous Transient T C = 25°C T C = 90°C T C = 25°C, 1 ms V GE = 15 V, TVJ = 125°C, RG = 22 Ω Clamped inductive load, L = 30 µ H V GE = 15 V, VCE = 0.6 V CES, TJ = 125°C RG = 22 Ω, non repetitive T C = 25°C 50/60 Hz IISOL ≤ 1 mA t = 1 min t=1s Maximum Ratings 1000 1000 ±20 ±30 38 25 50 ICM = 50 @ 0.8 VCES 10 205 2500 3000 -40 ... +150 150 -40 ... +150 V A V V A A A A µs W V~ V~ °C °C °C miniBLOC, SOT-227 B 1 2 V CGR V GES V GEM I C25 I C90 I CM SSOA (RBSOA) tSC (SCSOA) PC VISOL TJ TJM Tstg Md Weight 4 3 1 = Emitter, 2 = Gate, 3 = Collector 4 = Kelvin Emitter Mounting torque Terminal connection torque (M4) 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g Symbol Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) min. typ. max. 1000 5 TJ = 25°C TJ = 125°C 8 750 15 ±500 3.5 V V µA mA nA V Features International standard package miniBLOC (ISOTOP) compatible Isolation voltage 3000 V~ 2nd generation HDMOSTM process - for high short circuit SOA Low VCE(sat) - for minimum on-state conduction losses MOS Gate turn-on - drive simplicity Fast Recovery Epitaxial Diode (FRED) - short trr and IRM Low collector-to-case capacitance (< 50 pF) - reducesd RFI Low package inductance (< 10 nH) - easy to drive and to protect q q q q q q q q BVCES V...