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IXSN80N60BD1 Dataheets PDF



Part Number IXSN80N60BD1
Manufacturers IXYS Corporation
Logo IXYS Corporation
Description High Current IGBT
Datasheet IXSN80N60BD1 DatasheetIXSN80N60BD1 Datasheet (PDF)

IGBT with Diode Short Circuit SOA Capability IXSN 80N60BD1 VCES IC25 VCE(sat) tfi C G E = = = = 600 V 160 A 2.5 V 180 ns Preliminary Data Sheet E www.DataSheet4U.com Symbol Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C (Silicon chip capability) Lead current limit (RMS) TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 5 Ω Clamped inductive load VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 22 Ω, non repetitive TC = 25°C 50/60 Hz IISOL ≤ .

  IXSN80N60BD1   IXSN80N60BD1


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