IGBT
IGBT with Diode ISOPLUS 247TM
Short Circuit SOA Capability
IXSR 35N120BD1
(Electrically Isolated Backside)
VCES IC25 ...
Description
IGBT with Diode ISOPLUS 247TM
Short Circuit SOA Capability
IXSR 35N120BD1
(Electrically Isolated Backside)
VCES IC25 VCE(sat) tfi(typ)
= 1200 V = 70 A = 3.6 V = 180 ns
Symbol
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Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE= 15 V, TVJ = 125°C, RG = 22 Ω Clamped inductive load, L = 30 µH VGE= 15 V, VCE = 720 V, TJ = 125°C RG = 22 Ω, non repetitive TC = 25°C IGBT Diode
Maximum Ratings 1200 1200 ± 20 ± 30 70 30 140 ICM = 90 @ 0.8 VCES 10 250 150 -55 ... +150 150 -55 ... +150 V V V V A A A A µs W W °C °C °C V~ °C g Features
z z z z
VCES VCGR
ISOPLUS 247TM E 153432
VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg VISOL
G
C
E
Isolated backside*
G = Gate, E = Emitter
C = Collector,
* Patent pending
50/60 Hz, RMS
t = 1 min leads-to housing
2500 300 5
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Weight
z
DCB Isolated mounting tab Meets TO-247AD package outline High current handling capability Latest generation HDMOSTM process MOS Gate turn-on - drive simplicity
Applications
z
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1200 3 TJ = 25°C TJ = 150°C 6 V V
z
z z z
BVCES VGE(th) ICES IGES VCE(sat)
IC IC
= 3 mA, VGE = 0 V = 250 µA, VCE = VGE
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Similar Datasheet
- IXSR35N120BD1 IGBT - IXYS Corporation