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STG3P2M10N60B Dataheets PDF



Part Number STG3P2M10N60B
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description 1-Phase bridge rectifier + 3 phase inverter IGBT - SEMITOP2 module
Datasheet STG3P2M10N60B DatasheetSTG3P2M10N60B Datasheet (PDF)

STG3P2M10N60B 1-Phase bridge rectifier + 3 phase inverter IGBT - SEMITOP®2 module PRELIMINARY DATA General features www.DataSheet4U.com Type VCES 600V VCE(sat)(Max) @ IC=7A, IC@80°C Ts=25°C < 2.5V 10A STG3P2M10N60B ■ ■ ■ ■ ■ ■ ■ ■ N-channel very fast PowerMESH™ IGBT Lower on-voltage drop (Vcesat) Lower CRES / CIES ratio (no cross-conduction susceptbility) Very soft ultra fast recovery antiparallel diode High frequency operation up to 70 KHz New generation products with tighter parameter di.

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STG3P2M10N60B 1-Phase bridge rectifier + 3 phase inverter IGBT - SEMITOP®2 module PRELIMINARY DATA General features www.DataSheet4U.com Type VCES 600V VCE(sat)(Max) @ IC=7A, IC@80°C Ts=25°C < 2.5V 10A STG3P2M10N60B ■ ■ ■ ■ ■ ■ ■ ■ N-channel very fast PowerMESH™ IGBT Lower on-voltage drop (Vcesat) Lower CRES / CIES ratio (no cross-conduction susceptbility) Very soft ultra fast recovery antiparallel diode High frequency operation up to 70 KHz New generation products with tighter parameter distribution Compact design Semitop®2 is a trademark of semikron SEMITOP®2 Internal schematic diagram Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBT, with outstanding performances. Applications ■ ■ High frequency motor controls Motor drivers Order codes Sales type STG3P2M10N60B Marking G3P2M10N60B Package SEMITOP®2 Packaging SEMIBOX May 2006 Rev1 1/12 www.st.com 12 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. Contents STG3P2M10N60B Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Typical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 www.DataSheet4U.com 3 Test circuit ................................................ 8 4 5 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 STG3P2M10N60B Electrical ratings 1 Electrical ratings Table 1. Symbol VCES IC(1) Absolute maximum ratings Parameter Collector-emitter voltage (VGS = 0) Collector current (continuous) at Ts = 25°C Collector current (continuous) at Ts = 80°C Gate-emitter Voltage TP<1ms; Ts=25°C TP<1ms; Ts=80°C Diode RMS forward current at Ts = 25°C Total dissipation at Ts = 25°C Insulation withstand voltage A.C. (t=1min/sec; Ts=25°C) Storage temperature Operating junction temperature Value 600 19 10 ±20 38 20 19 56 2500/3000 – 40 to 125 – 40 to 150 Unit V A A V A A A W V °C °C www.DataSheet4U.com IC(1) VGE ICM(2) ICM IF PTOT VISO Tstg Tj 1. Calculated value 2. Pulse width limited by max. junction temperature Table 2. Symbol Rth(j-s) Thermal resistance Parameter Thermal resistance junction-sink(1) Max. Value 2.2 Unit K/W 1. Resistance value with conductive grease applied and maximum mounting torque equal to 2Nm 3/12 Electrical characteristics STG3P2M10N60B 2 Electrical characteristics (TS=25°C unless otherwise specified) Table 3. Symbol VBR(CES) Static Parameter Collector-emitter breakdown voltage Collector cut-off current (VGE = 0) Gate-Emitter Leakage Current (VCE = 0) Gate Threshold Voltage Test condictions IC= 1mA, VGE= 0 VCE= Max rating,TS= 25°C VCE=Max rating,TS= 125°C VGE= ±20V , VCE= 0 VCE= VGE, IC= 250µA 3.75 1.85 1.7 Min. 600 10 1 ±100 5.75 2.5 Typ. Max. Unit V µA mA nA V V V www.DataSheet4U.com ICES IGES VGE(th) VCE(sat) Collector-emitter saturation VGE= 15V, IC= 7A voltage VGE= 15V, IC= 7A, Tc= 125°C Table 4. Symbol gfs (1) Cies Coes Cres Qg Qge Qgc Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-emitter charge Gate-collector charge Test condictions VCE = 15V, IC= 7A VCE = 25V, f = 1MHz, VGE = 0 Min. Typ. 4.30 720 81 17 35 7 16 48 Max. Unit S pF pF pF nC nC nC VCE = 390V, IC = 5A, VGE = 15V, (see Figure 8) 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 4/12 STG3P2M10N60B Electrical characteristics Table 5. Symbol td(on) tr (di/dt)on td(on) tr (di/dt)on www.DataSheet4U.com Switching on/off Parameter Turn-on delay time Current rise time Turn-on current slope Turn-on delay time Current rise time Turn-on current slope Off voltage rise time Turn-off delay time Current fall time Off voltage rise time Turn-off delay time Current fall time Test condictions VCC = 300V, IC = 7A , VGE= ±15V RG= 22Ω TS= 25°C (see Figure 9) VCC = 300V, IC = 7A , VGE= ±15V RG= 22Ω TS=125°C (see Figure 9) VCC = 300V, IC = 7A RG= 22Ω , VGE= ±15V TS=25°C (see Figure 9) VCC = 300V, IC = 7A , VGE= ±15V RG= 22Ω TS=125°C (see Figure 9) Min. Typ. 18.5 8.5 1060 18.5 7 1000 27 72 60 56 116 105 Max. Unit ns ns A/µs ns ns A/µs ns ns ns ns ns ns tr(Voff) td(off) tf tr(Voff) td(off) tf Table 6. Symbol Eon(1) Eoff(2) Ets Eon(1) Eoff(2) Ets Switching energy (inductive load) Parameter Turn-on switching losses Turn-off switching losses Total switching losses Test condictions VCC = 300V, IC = 7A , VGE= ±15V RG= 22Ω TS=25°C (see Figure 9) VCC = 300V, IC = 7A RG= 22Ω , VGE= ±15V TS= 125°C (see Figure 9) Min. Typ. 95 115 210 Max. Unit µJ µJ µJ Turn-on switching losses Turn-off switchin.


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