3 Phase inverter IGBT - SEMITOP module
STG3P3M25N60
3 Phase inverter IGBT - SEMITOP®3 module
PRELIMINARY DATA
General features
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Type
VCES...
Description
STG3P3M25N60
3 Phase inverter IGBT - SEMITOP®3 module
PRELIMINARY DATA
General features
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Type
VCES 600V
VCE(sat)(Max) @ IC=7A, IC@80°C Ts=25°C < 2.5V 25A
STG3P3M25N60
■ ■ ■ ■ ■ ■ ■ ■ ■
N-channel very fast PowerMESH™ IGBT Lower on-voltage drop (Vcesat) Lower CRES / CIES ratio (no cross-conduction susceptbility) Very soft ultra fast recovery antiparallel diode High frequency operation up to 70 KHz New generation products with tighter parameter distribution One screw mounting Compact design Semitop®3 is a trademark of Semikron
SEMITOP®3
Internal schematic diagram
Description
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBT, with outstanding performances.
Applications
■ ■
High frequency inverters Motor drivers
Order codes
Sales Type STG3P3M25N60 Marking G3P3M25N60 Package SEMITOP®3 Packaging SEMIBOX
May 2006
Rev1
1/12
www.st.com 12
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
Contents
STG3P3M25N60
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Typical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
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