P11NM60

STP11NM60 - STP11NM60FP STB11NM60 - STB11NM60-1 N-channel 650V @ TJmax - 0.4Ω - 11A TO-220/FP/D2PAK/I2PAK MDmesh™ Power MOSFET General features www.DataSheet4U.com Type VDSS (@TJ=TJmax) 650V 650V 650V 650V RDS(on) <0.45Ω <0.45Ω <0.45Ω <0.45Ω ID 3 STP11NM60 STP11NM60FP STB11NM60 STB11NM60-1 ■ ■ ■ ■ 11A 11A 11A 11A TO-220 1 2 3 1 2 TO-220FP High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 1 3 3 12 D2PAK i2PAK Description The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products. Internal schematic diagram Applications ■ Switching application Order codes Part number STB11NM60T4 STB11NM60-1 STP11NM60 STP11NM60FP Marking B11NM60 B11NM60-1 P11NM60 P11NM60FP Package D²PAK I²PAK TO-220 TO-220FP Packaging Tape & reel Tube Tube Tube January 2007 Rev 6 1/16 www.st.com 16 Contents STP11NM60-STP11NM60FP-STB11NM60-STB11NM60-1 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . ...