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2SC4081W Dataheets PDF



Part Number 2SC4081W
Manufacturers Galaxy Semi-Conductor Holdings Limited
Logo Galaxy Semi-Conductor Holdings Limited
Description Silicon Epitaxial Planar Transistor
Datasheet 2SC4081W Datasheet2SC4081W Datasheet (PDF)

BL Galaxy Electrical Silicon Epitaxial Planar Transistor FEATURES z z Excellent hFE linearity. Complements the 2A1576A Production specification 2SC4081W Pb Lead-free www.DataSheet4U.com APPLICATIONS z NPN Silicon Epitaxial Planar Transistor. SOT-323 ORDERING INFORMATION Type No. 2SC4081W Marking BQ/BR/BS Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol VCBO VCEO VEBO IC PC Tj,Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltag.

  2SC4081W   2SC4081W


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BL Galaxy Electrical Silicon Epitaxial Planar Transistor FEATURES z z Excellent hFE linearity. Complements the 2A1576A Production specification 2SC4081W Pb Lead-free www.DataSheet4U.com APPLICATIONS z NPN Silicon Epitaxial Planar Transistor. SOT-323 ORDERING INFORMATION Type No. 2SC4081W Marking BQ/BR/BS Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol VCBO VCEO VEBO IC PC Tj,Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature Value 60 50 6 150 200 -55~150 Units V V V mA mW ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Document number: BL/SSSTF002 Rev.A www.galaxycn.com 1 BL Galaxy Electrical Silicon Epitaxial Planar Transistor Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage www.DataSheet4U.com Production specification 2SC4081W MIN TYP MAX UNIT 60 50 6 0.1 0.1 120 560 0.4 180 3.5 V GHz pF V V V μA μA Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob Test conditions IC=50μA,IE=0 IC=1mA,IB=0 IE=50μA,IC=0 VCB=60V,IE=0 VEB=6V,IC=0 VCE=6V,IC=1mA ICE=50mA,IB=5mA VCE=12V, IC= 2mA,f=30MHz VCB=12V,IE=0,f=1MHz Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance CLASSIFICATION Rank Range Marking OF hFE Q R 180-390 BR S 270-560 BS 120-270 BQ Document number: BL/SSSTF002 Rev.A www.galaxycn.com 2 BL Galaxy Electrical Silicon Epitaxial Planar Transistor Production specification 2SC4081W TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified www.DataSheet4U.com Document number: BL/SSSTF002 Rev.A www.galaxycn.com 3 BL Galaxy Electrical Silicon Epitaxial Planar Transistor PACKAGE OUTLINE Plastic surface mounted package Production specification 2SC4081W SOT-323 SOT-323 Dim www.DataSheet4U.com Min 1.8 1.15 0.15 0.25 1.2 0.02 2.1 Max 2.2 1.35 0.35 0.40 1.4 0.1 2.3 A B C D E G H J K 1.0Typical 0.1Typical All Dimensions in mm PACKAGE Device 2SC4081W INFORMATION Package SOT-323 Shipping 3000/Tape&Reel Document number: BL/SSSTF002 Rev.A www.galaxycn.com 4 .


ST92186B 2SC4081W 2SC4081UB


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