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IXDS430

IXYS Corporation

(IXDx430) 30 Amp Low-Side Ultrafast MOSFET / IGBT Driver

IXDN430 / IXDI430 / IXDD430 / IXDS430 30 Amp Low-Side Ultrafast MOSFET / IGBT Driver Features • Built using the advantag...


IXYS Corporation

IXDS430

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Description
IXDN430 / IXDI430 / IXDD430 / IXDS430 30 Amp Low-Side Ultrafast MOSFET / IGBT Driver Features Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes Latch-Up Protected High Peak Output Current: 30A Peak Wide Operating Range: 8.5V to 35V Under Voltage Lockout Protection Ability to Disable Output under Faults High Capacitive Load Drive Capability: 5600 pF in <25ns www.DataSheet4U.com Matched Rise And Fall Times Low Propagation Delay Time Low Output Impedance Low Supply Current General Description The IXDN430/IXDI430/IXDD430/IXDS430 are high speed high current gate drivers specifically designed to drive MOSFETs and IGBTs to their minimum switching time and maximum practical frequency limits. The IXD_430 can source and sink 30A of peak current while producing voltage rise and fall times of less than 30ns. The input of the drivers are compatible with TTL or CMOS and are fully immune to latch up over the entire operating range. Designed with small internal delays, cross conduction/current shoot-through is virtually eliminated in all configurations. Their features and wide safety margin in operating voltage and power make the drivers unmatched in performance and value. The IXD_430 incorporates a unique ability to disable the output under fault conditions. The standard undervoltage lockout is at 12.5V which can also be set to 8.5V in the IXDS430SI. When a logical low is forced into the Enable inputs, both final output stage MOSFETs (NMO...




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