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BAV19 Dataheets PDF



Part Number BAV19
Manufacturers Galaxy Semi-Conductor
Logo Galaxy Semi-Conductor
Description (BAVxx) SMALL SIGNAL SWITCHING DIODE
Datasheet BAV19 DatasheetBAV19 Datasheet (PDF)

BL FEATURES GALAXY ELECTRICAL BAV17---BAV21 VOLTAGE RANGE: 20-200 V CURRENT: 250 mA SMALL SIGNAL SWITCHING DIODE Silicon epitaxial planar diode High speed switching diode 500 m W power dissipation DO - 35(GLASS) www.DataSheet4U.com MECHANICAL DATA Case: DO-35,glass case Polarity: Color band denotes cathode Weight: 0.004 ounces, 0.13 gram s MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 am bient temperature unless otherwise specified. MAXIMUM RATINGS Reverse voltage Peak re.

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BL FEATURES GALAXY ELECTRICAL BAV17---BAV21 VOLTAGE RANGE: 20-200 V CURRENT: 250 mA SMALL SIGNAL SWITCHING DIODE Silicon epitaxial planar diode High speed switching diode 500 m W power dissipation DO - 35(GLASS) www.DataSheet4U.com MECHANICAL DATA Case: DO-35,glass case Polarity: Color band denotes cathode Weight: 0.004 ounces, 0.13 gram s MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 am bient temperature unless otherwise specified. MAXIMUM RATINGS Reverse voltage Peak reverse voltage Average forw ard rectified current Half w ave rectification w ith resist.load @TA =25 and f 50Hz Forw ard surge current @ t<1s and TJ =25 Pow er dissipation @ TA =25 Thermal resistance junction to ambient Junction temperature Storage temperature range VR V RM I(AV) IFSM P tot RθJA TJ TSTG BAV17 20 25 BAV18 50 60 BAV19 100 120 250 1) 1.0 500 350 175 -55 --- +175 1) BAV20 150 200 BAV21 200 250 UNITS V V mA A mW K/W 1)Valid prov ided that leads at a distance of 8 mm f rom case are kept at ambient temperature. ELECTRICAL CHARACTERISTICS Forw ard voltage @ IF=100mA Leakage current at reverse voltage @Tj=25 @Tj=100 f=1MHZ VF IR CJ t rr MIN - TYP 1.5 - MAX 1.0 UNITS V 100 15 50 nA µA pF ns www.galaxycn.com Capacitance @ V F=V R=0V Reverse recovery time from IF=30mA to IR=30mA from IRR=3mA, RL=100Ω. 1)Valid prov ided that leads at a distance of 8 mm f rom case are kept at ambient temperature. Document Number 0268008 BLGALAXY ELECTRICAL 1. RATINGS AND CHARACTERISTIC CURVES FIG.1 -- FORWARD CHARACTERISTICS mA 1000 BAV17---BAV21 FIG.2 -- ADMISSIBLE FORWARD CURRENT VERSUS AMBIENT TEMPERATURE A .3 100 TJ=100 I O, I F .2 DC CURRENT I F 10 IF TJ=25 www.DataSheet4U.com 1 .1 CURRENT (RECTIF.) I F(AV) .1 1 .01 0 .2 .4 .6 .8 1.0V 0 30 60 90 120 TA 150¡æ VF FIG.3 -- ADMISSIBLE POWER DISSLPATION VERSUS AMBIENT TEMPERATURE mW 500 FIG.4 -- LEAKAGE CURRENT VERSUS JUNCTION TEMPERATURE 1000 I R (T J ) 400 P tot I R (25 ) 100 300 10 200 100 1 V R =50V 1 0 100 TA 200¡æ 0.1 0 100 TJ 200¡æ FIG.5 -- DYNAMIC FORWARD RESISTANCE VERSUS FORWARD CURRENT FIG.6 -- CAPACITANCE VERSUS REVERSE VOLTAGE 100 2 1.8 T J =25 r 50 F 1.6 1.4 20 10 5 CJ 1.2 1 .8 .6 .4 2 1 1 2 5 10 20 50 .2 0 .1 .2 .5 1 2 5 10 20 50 100V IF 100 mA VR www.galaxycn.com Document Number 0268008 BLGALAXY ELECTRICAL 2. .


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