3DA752

Transys Electronics L I M I T E D TO-251 Plastic-Encapsulated Transistors 3DA752 TRANSISTOR (NPN) TO-251 FEATURES Power dissipation PCM: 1.2 W (Tamb=25℃) 1. BASE 2. COLLECTOR 3. EMITTER aSheet4U.com Collector current 2 A ICM: Collector-base voltage 40 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) VCE(sat)1 Collector-emitter saturation voltage VCE(sat)2 Transition frequency Collector output capacitance 1 2 3 unless otherwise specified) Test conditions MIN TYP MAX UNIT V V V Ic=100µA, IE=0 Ic=10mA, IB=0 IE=1m A, IC=0 VCB=40V, IE=0 VEB=5V, IC=0 VCE=2V, IC=500mA IC=2A, IB=0.2A IC=1.5A, IB=30mA VCE=5V, IC=500mA VCB=10V, IE=0, f=1MHz 40 30 5 0.1 0.1 100 400 0.8 2 µA µA V V MHz pF fT Cob 120 13 CLASSIFICATION OF hFE(1) Rank Range Marking O 100-200 Y 160-320 G 200-400 ...